View FDS3912_119057.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDS3912
October 2001
FDS3912
100V Dual N-Channel PowerTrench(R) MOSFET
General Description
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
* 3 A, 100 V. RDS(ON) = 125 m @ VGS = 10 V RDS(ON) = 135 m @ VGS = 6 V * Fast switching speed * Low gate charge (14 nC typ) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability
5 6 7 8
Q2 Q1
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
100 20
(Note 1a)
Units
V V A W
3 20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1.0 0.9 -55 to +175 C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking FDS3912 Device FDS3912 Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2001 Fairchild Semiconductor Corporation
FDS3912 Rev C2(W)
FDS3912
Electrical Characteristics
Symbol
W DSS IAR
TA = 25C unless otherwise noted
Parameter
(Note 2)
Test Conditions
Single Pulse, VDD = 50 V, ID= 3 A
Min
Typ
Max Units
90 3.0 mJ A
Drain-Source Avalanche Ratings
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 80 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V
100 108 10 100 -100
V mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, ID = 3 A VGS = 6 V, ID = 2.8 A VGS = 10 V, ID = 3 A, T J = 125C VGS = 10 V, VDS = 10 V VDS = 10V, ID = 3 A
2
2.5 -6 92 98 175
4
V mV/C
125 135 250
m
ID(on) gFS
10 11
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 50 V, f = 1.0 MHz
V GS = 0 V,
632 40 20
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 50 V, VGS = 10 V,
ID = 1 A, RGEN = 6
8.5 2 23 4.5
17 4 37 9 20
ns ns ns ns nC nC nC
VDS = 50 V, VGS = 10 V
ID = 3 A,
14 2.4 3.8
FDS3912 Rev C2(W)
FDS3912
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A
(Note 2)
1.3 0.76 30
(Note 2)
A V nS nC
1.2
IF = 3A diF/dt = 100 A/s
106
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when mounted on a 2 0.5in pad of 2 oz copper
b)
125C/W when mounted on a 2 0.02 in pad of 2 oz copper
c)
135C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS3912 Rev C2(W)
FDS3912
Typical Characteristics
20 4.5V ID, DRAIN CURRENT (A) 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 5.0V 1.8 1.6 VGS = 4.0V 1.4 4.5V 1.2 5.0V 6.0V 10V
12 4.0V 8
4 3.5V 0 0 2 4 6 8 VDS, DRAIN-SOURCE VOLTAGE (V)
1
0.8 0 4 8 12 16 20 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.3 RDS(ON), ON-RESISTANCE (OHM)
2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
ID = 3A VGS = 10V
I D = 1.5A 0.25
0.2
TA = 125 oC
0.15 TA = 25 oC 0.1
125
150
175
0.05 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
20 VDS = 10V ID, DRAIN CURRENT (A) 16
I S, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 V GS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2
12
8 TA = 125oC 4 -55 C 0 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V)
o
25 C
o
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS3912 Rev C2(W)
FDS3912
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 3A 8 CAPACITANCE (pF) 80V 6 600 500 400 300 200 COSS 100 CRSS 0 0 2 4 6 8 10 12 14 16 Qg, GATE CHARGE (nC) 0 0 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS = 40V 60V 700 CISS 800 f = 1MHz VGS = 0 V
4
2
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) 40
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT
100s 1ms 10ms 100ms 10s 1s DC
30
SINGLE PULSE R JA = 135C/W TA = 25C
1
20
0.1 VGS = 10V SINGLE PULSE o R JA = 135 C/W TA = 25 oC 0.001 0.01
10
0.01
0.1
1
10
100
1000
0 0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + R JA RJA = 135 C/W
0.05
0.1
0.1
P(pk)
0.02 0.01
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS3912 Rev C2(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop
DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

▲Up To Search▲

Price & Availability of FDS3912

	To Download FDS3912 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .